Researchers at the Technical University of Dresden (TUD) have developed a new OLED structure, which has been supplemented with vertical transparent base transistors (OPBTs). The new structure has been named “organic transistor base light emitting transistor” or OPB-LET.
The new design successfully combines the functions of a high efficiency switching element and an organic emitter. OLED transistors (OLET) are three-pole devices in which a thin film transistor is combined with an LED. Unlike previous OLETs, OPB-LET offers high performance thanks to a permeable reference electrode located in the center of the device. The electrode forms a characteristic optical microcavity that controls the injection and transport of charge carriers.
The researchers report that the structure provides high efficiency (up to 24.6% EQE), high brightness (up to 12,513 cd / m22) and low control voltage (less than 5.0 V). This is comparable to the performance of modern OLED devices, but the OPB-LET already has built-in low voltage control transistors.
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