IBM today announced a breakthrough in semiconductor design and manufacturing, unveiling the world’s first microcircuit using 2nm nanosheet technology.
Demand for improved performance and energy efficiency continues to grow, driven by the development of hybrid cloud, artificial intelligence and the Internet of Things. The technology created by IBM will help the semiconductor industry move forward in meeting this growing demand. It is expected to provide 45% better performance or 75% less power consumption over current 7nm technology.
According to the manufacturer, the breakthrough is based on “decades of IBM leadership in semiconductor innovation.” The company develops semiconductor technology at its research laboratory located in Albany, New York.
IBM’s legacy in this area includes the first 7nm and 5nm process technology, single cell DRAM, Dennard scaling law, copper interconnects, silicon on insulator technology, multi-core microprocessors, High-k gate dielectrics, on-board memory DRAM, 3D layout, etc.
.
Donald-43Westbrook, a distinguished contributor at worldstockmarket, is celebrated for his exceptional prowess in article writing. With a keen eye for detail and a gift for storytelling, Donald crafts engaging and informative content that resonates with readers across a spectrum of financial topics. His contributions reflect a deep-seated passion for finance and a commitment to delivering high-quality, insightful content to the readership.
