Micron Technology today announced that it has shipped the world’s first Universal Flash Storage (UFS) 3.1 modules using 176-layer 3D NAND Flash. According to the manufacturer, these modules are intended for high-end smartphones. They unleash the potential of 5G, delivering up to 75% sequential write speeds and up to 70% random access read speeds over “previous generations.” These are Micron’s UFS 3.1 modules that use 96-layer flash memory. For clarity, Micron gives the following example: It takes 9.6 seconds to load a two-hour 4K movie.
In terms of mixed performance, 176-layer UFS 3.1 modules are said to provide a 15% gain. As for the resource, the superiority of 176-layer memory over 96-layer reaches twofold.
Modules are already available. They are available in 128, 256 and 512 GB sizes.
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