During the IEDM conference in San Francisco, IBM and Samsung Electronics announced a vertical transistor technology called VTFET. Unlike existing technologies, which provide for horizontal placement of transistors, the new development implies a chip design in which the transistors are located perpendicular to the surface of the crystal, and the current flows vertically. The companies expect VTFETs to double the performance of their chips or reduce power consumption by 85% over FinFETs.
Representatives from IBM and Samsung said smartphones and other portable devices based on VTFET processors will be able to work without recharging for an entire week. The new technology will also find application in cryptocurrency mining – such tasks will become extremely energy efficient, which will lead to a lower environmental impact. In addition, the VTFET will allow you to bypass Moore’s law and, in theory, overcome the 1 nm barrier.
IBM and Samsung have not announced the timing of new chips based on VTFET technology. In the meantime, Intel is also working on similar microcircuits, which plans to bring Intel 20A processors to the market by the end of 2024.
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