Samsung Electronics announced the beginning of mass production of 14nm DRAM memory using photolithography in the hard ultraviolet range (EUV). The company shipped the industry’s first EUV DRAM last March. Since then, the number of layers formed with EUV has increased to five. According to the manufacturer, this is the most advanced process technology in the industry.
It provides the highest storage density available today, with approximately 20% more memory per platter. In addition, the 14nm process technology can help reduce power consumption by up to 20% over the previous generation.
According to Samsung, the new memory will help achieve “unprecedented speeds” of up to 7.2 Gbps, more than double the maximum DDR4 speed of 3.2 Gbps.
Samsung plans to release new DDR5 memory for data centers, supercomputers and corporate servers. In addition, it is planned to increase the density of crystals up to 24 Gbps.
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