The Toshiba ST2000GXH32 transistor is designed for a collector-emitter voltage of 4500 V and a collector current of 2000 A

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Toshiba has announced the start of mass production of an Injection Enriched Gate Transistor (IEGT) in a 168mm diameter crimp package. The new product, called ST2000GXH32, is characterized by a rated collector-emitter voltage of 4500 V and a rated collector current of 2000 A.

The Toshiba ST2000GXH32 transistor is designed for a collector-emitter voltage of 4500 V and a collector current of 2000 A
The Toshiba ST2000GXH32 transistor is designed for a collector-emitter voltage of 4500 V and a collector current of 2000 A
The Toshiba ST2000GXH32 transistor is designed for a collector-emitter voltage of 4500 V and a collector current of 2000 A

A newly developed high speed diode for high voltage converters is included in the structure of the transistor. The cathode structure of this diode is said to be such that it suppresses voltage fluctuations during reverse recovery, improving the reverse recovery resistance. In addition, it allows you to maintain performance at high temperatures. Compared to the previously released Toshiba ST2000GXH31 transistor, it is possible to use a small resistor in the gate drive circuit, which reduces switching losses by approximately 30% (from 12.0 to 8.4 J). In addition, the improved cathode increases the peak power during reverse recovery by about 29%, and the allowable junction temperature is increased from 125 ° C to 150 ° C.

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ST2000GXH32 applications are high voltage industrial equipment including inverters and converters for electric motors. The transistor weighs 2.7 kg.

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