Samsung Electronics announced that it is developing the industry’s first DDR5 memory using High-K Metal Gate (HKMG) technology. It is a technology using high dielectric constant dielectrics and metal gates.
The company has already expanded its portfolio with a corresponding 512GB DDR5 module. In this case, one module accommodates eight layers of 16 GB DRAM chips, combined through the technology of volumetric layout with interlayer connections (Through-Silicon Vias, TSV).
This memory provides data transfer rates up to 7200 Mbps, which is double that of DDR4. Samsung itself talks about the use of such modules in supercomputers and computations related to artificial intelligence and machine learning.
Also, the Korean giant notes 13% less power consumption of the new memory.
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